By Hua-Tay Lin; Taejin Hwang; Soshu Kirihara; Sujanto Widjaja
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Extra resources for Advanced ceramic coatings and materials for extreme environments III : a collection of papers presented at the 37th International Conference in Advanced Ceramics and Composites, January 27-February 1, 2013, Daytona Beach, Florida
8(b) mimic the high resolution TEM image in Fig. 8(a) and indicates that the Ge film is rotated by 180° with respect to the  direction of CaF2. Thus the Ge is a type B epitaxy layer. Figure 8. (a) High resolution TEM image of biaxial Ge and CaF2 films. The red dashed line represents an interface of Ge and CaF2. (b) A schematic representing the relative orientation between Ge and CaF2 films. From . First principles calculations using the density function theory has been performed to determine the energetics of the Ge(lll) on CaF2 interface.
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